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TIP30CG

TO220-3/BIPOLAR POWER T0220 PNP 1A 100V

 ON SEMICONDUCTOR Oui 2850 TO220-3/BIPOLAR POWER T0220 PNP 1A 100V
10 Jours *
LF33ABDT-TR

LF33ABDT-TR

 STMICROELECTRONICS Oui 225 LF33ABDT-TR
10 Jours *
SZMMSZ16T1G

ZEN SOD123 REG 0.5W 16V

 ON SEMICONDUCTOR Oui 12000 ZEN SOD123 REG 0.5W 16V
10 Jours *
BAS16HT1G

SMD-Si-Diode 100V 200mA SOD323

 ON SEMICONDUCTOR Oui 5000 SMD-Si-Diode 100V 200mA SOD323
10 Jours *
TS431BILT

TS431BILT

 STMICROELECTRONICS Oui 33000 TS431BILT
10 Jours *
TL431AIDR2G

SOIC 8/I°/2.5V PROGRAMMABLE PRECISION REFERENCE

 ON SEMICONDUCTOR Oui 2500 SOIC 8/I°/2.5V PROGRAMMABLE PRECISION REFERENCE
10 Jours *
71342LA25PFGI

71342LA25PFGI

 IDT - INTEGRATED DEVICE TECHNOLOGY Oui 10 71342LA25PFGI
10 Jours *
VIPER06HS

115kHz 800V 2 ,5A 32R SSO10

 STMICROELECTRONICS Oui 110 115kHz 800V 2 ,5A 32R SSO10
10 Jours *
LM2672MX-5.0/NOPB

Switch. Reg 1A 5V 45Vs SO8

 TEXAS INSTRUMENTS Oui 2900 Switch. Reg 1A 5V 45Vs SO8
10 Jours *
MT41K128M16JT-125 XIT:K

MT41K128M16JT-125 XIT:K

 MICRON TECHNOLOGY Oui 573 MT41K128M16JT-125 XIT:K
10 Jours *
QS3253QG

QS3253QG

 IDT - INTEGRATED DEVICE TECHNOLOGY Oui 1455 QS3253QG
10 Jours *
LD1117S12CTR

LD1117S12CTR

 STMICROELECTRONICS Oui 2500 LD1117S12CTR
10 Jours *
C13232_HB-2X2-WW

C13232_HB-2X2-WW

 LEDIL Oui 7301 C13232_HB-2X2-WW
10 Jours *
MB85R4001ANC-GE1

MB85R4001ANC-GE1

 FUJITSU SEMICONDUCTOR Oui 36 MB85R4001ANC-GE1
10 Jours *
IPW65R045C7FKSA1

N-Ch 650V 46A 227W 0 ,045R TO247

 INFINEON TECHNLOLOGIES Oui 60 N-Ch 650V 46A 227W 0 ,045R TO247
10 Jours *
MT48LC8M16A2P-6A:L

8MX16 SDRAM PLASTIC COMMERCIAL PBF TSOP 3.3V

 MICRON TECHNOLOGY Oui 17832 8MX16 SDRAM PLASTIC COMMERCIAL PBF TSOP 3.3V
10 Jours *
IRFU220PBF

N-CH 200V 4 ,8A 42W 0 ,8R TO251AA

 VISHAY Oui 225 N-CH 200V 4 ,8A 42W 0 ,8R TO251AA
10 Jours *
LM2594M-12/NOPB

SwitcSwitch. Reg 0 ,5A 150kHz SO8

 TEXAS INSTRUMENTS Oui 720 SwitcSwitch. Reg 0 ,5A 150kHz SO8
10 Jours *
QS32X861Q1G

QS32X861Q1G

 IDT - INTEGRATED DEVICE TECHNOLOGY Oui 16 QS32X861Q1G
10 Jours *
DCX123JU-7-F

SOT-363/ / PREBIASED TRANSISTOR R1<>R2 NPN/PNP 200MW 2.2KOhms 47KOhms ROHS 3K

 DIODES INCORPORATED Oui 84000 SOT-363/ / PREBIASED TRANSISTOR R1<>R2 NPN/PNP 200MW 2.2KOhms 47KOhms ROHS 3K
10 Jours *
* Délais moyen constatés